GaN on Silicon for Optoelectronics and Power Electronics
发 光 学 论 坛
第1期
GaN on Silicon for Optoelectronics and Power Electronics
孙 钱 研究员
中国科学院苏州纳米技术与纳米仿生研究所
时间:2015年6月26日上午9:30
地点: 发光室5楼大会议室
摘要：The dream of epitaxially integrating III-Nitride semiconductors on large diameter silicon is being fulfilled through the R&D efforts of academia and industry, which is driven by the great potential of GaN-on-Silicon technology in both improving the device performance and adding the system functionality, yet at a significantly reduced cost for optoelectronics and power electronics. This epitaxial integration was hindered by two key technological challenges. The large lattice mismatch between GaN and Si (~17%) often causes a high density of dislocation defects, and the huge misfit in the coefficient of thermal expansion (~54%) results in crack network formation in the GaN epitaxial film. In this talk, we will first walk through various technical approaches in eliminating the crack network, and then present in detail a stress compensation method with an AlN/AlGaN hand-shaking buffer, which has been experimentally verified with a great reproducibility in achieving crack-free GaN-on-Si film with a crystalline quality comparable to that of GaN grown on sapphire substrates. On top of the high-quality GaN-on-Si material platform, we have built highly efficient blue/white/UV LEDs, laser diode, and AlGaN/GaN-based HEMTs (high electron mobility transistors). The different requirements of the various devices for the GaN-on-Si material property and device structure will also be discussed.
个人简介：
孙钱，研究员、博导，优秀青年基金获得者，科技部 “第三代半导体材料”项目总体专家组成员。2002年毕业于中国科技大学，获学士学位，2009年毕业于美国耶鲁大学电子工程系，获博士学位并荣获耶鲁大学工学院唯一的优秀博士毕业生奖。2012年入选江苏省“双创人才”计划”，2015年被评为中国电子学会优秀科技工作者。
孙钱研究员一直从事GaN材料与器件研究，迄今为止共发表了SCI收录论文60余篇，获10余项美国和中国发明专利，其中一项已许可给韩国首尔半导体Seoul Semiconductor公司。多次应邀在国际氮化物会议IWN、ICMOVPE、 Semicon Taiwan LED 2014等上做特邀报告。目前承担863项目、工信部电子信息产业发展基金项目、及江苏省科技支撑计划项目等项目，致力研究新型高效LED、激光器、GaN基功率电子器件、硅衬底氮化物半导体的MOCVD外延生长及器件制备等。曾任美国硅谷的普瑞光电公司的外延研发科学家，在8英寸硅衬底上实现了160流明/瓦的高光效GaN基LED。普瑞光电公司已将该技术转售给日本东芝公司，获技术转让费逾1亿美元。回国后与晶能光电有限公司进行产学研实质性合作，成功研发出新一代硅衬底GaN基高效LED的外延及芯片工艺技术，并在全球率先成功产业化，2014年晶能光电基于该技术而新增的LED产品销售逾3亿人民币。